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Upper limits on terahertz difference frequency generation power in quantum well heterostructures

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Upper limits on terahertz difference frequency generation power in quantum well heterostructures

Auteurs : RBID : Pascal:11-0263510

Descripteurs français

Pascal (Inist)
- Pompage optique, Champ intense, Saturation optique, Laser cascade quantique, Intracavité, Laser semiconducteur, Optique non linéaire, Etude théorique, Théorie onde couplée, Matrice densité, Domaine fréquence THz, Fréquence différence, Température ambiante, Puits quantique, Hétérostructure, Puits quantique multiple, Composé ternaire, Gallium Arséniure, Indium Arséniure, Système quantique, Equation Poisson, GaInAs, As Ga In, InGaAs, AlInAs, Non linéarité ordre 2, 0130C, 4255P.

English descriptors

KwdEn :
- Ambient temperature, Coupled wave theory, Density matrix, Difference frequency, Gallium Arsenides, Heterostructures, High field, Indium Arsenides, Intracavity, Multiple quantum well, Nonlinear optics, Optical pumping, Optical saturation, Poisson equation, Quantum cascade laser, Quantum system, Quantum wells, Semiconductor lasers, THz range, Ternary compounds, Theoretical study.

Abstract

There is currently considerable interest in terahertz (THz) difference frequency generation (DFG) utilizing near-resonant intersubband nonlinearity in quantum cascade lasers and other quantum well heterostructures. Such devices were shown to operate at room temperature, but their power demonstrated so far has been rather low. In all previous works the intracavity configuration was studied, in which the nonlinear mixing region was placed inside a pump laser cavity. Here we obtain the upper limits on the THz DFG power that can be achieved in intersubband quantum well systems under external optical pumping. We consider strong optical fields and include all resonant absorption or pump depletion, and nonlinear saturation effects by self-consistently solving three coupled wave equations, the Poisson equation, and density matrix equations. Although we use a GaInAs/AlInAs double quantum well heterostructure as an example, our analysis is applicable to any material system possessing resonant second-order optical nonlinearity. The maximal THz DFG power is reached for intermediate pump intensities of the order of the saturation intensity. Further increase of the pump intensity results in the decrease of the maximum THz DFG power. We analyze the dependence of THz power on the length and doping of the nonlinear mixing region, and present the design of the optimal structures.

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Le document en format XML

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<author><name sortKey="Cho, Yong Hee" uniqKey="Cho Y">Yong-Hee Cho</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Texas A&M University</s1>
<s2>College Station, Texas 77843</s2>
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<country>États-Unis</country>
<wicri:noRegion>College Station, Texas 77843</wicri:noRegion>
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<author><name sortKey="Belkin, Mikhail A" uniqKey="Belkin M">Mikhail A. Belkin</name>
<affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1>
<s2>Austin, Texas 78758</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<placeName><settlement type="city">Austin (Texas)</settlement>
<region type="state">Texas</region>
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<orgName type="university">Université du Texas à Austin</orgName>
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</author>
<author><name sortKey="Belyanin, Alexey" uniqKey="Belyanin A">Alexey Belyanin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Texas A&M University</s1>
<s2>College Station, Texas 77843</s2>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term>
<term>Coupled wave theory</term>
<term>Density matrix</term>
<term>Difference frequency</term>
<term>Gallium Arsenides</term>
<term>Heterostructures</term>
<term>High field</term>
<term>Indium Arsenides</term>
<term>Intracavity</term>
<term>Multiple quantum well</term>
<term>Nonlinear optics</term>
<term>Optical pumping</term>
<term>Optical saturation</term>
<term>Poisson equation</term>
<term>Quantum cascade laser</term>
<term>Quantum system</term>
<term>Quantum wells</term>
<term>Semiconductor lasers</term>
<term>THz range</term>
<term>Ternary compounds</term>
<term>Theoretical study</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Pompage optique</term>
<term>Champ intense</term>
<term>Saturation optique</term>
<term>Laser cascade quantique</term>
<term>Intracavité</term>
<term>Laser semiconducteur</term>
<term>Optique non linéaire</term>
<term>Etude théorique</term>
<term>Théorie onde couplée</term>
<term>Matrice densité</term>
<term>Domaine fréquence THz</term>
<term>Fréquence différence</term>
<term>Température ambiante</term>
<term>Puits quantique</term>
<term>Hétérostructure</term>
<term>Puits quantique multiple</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Système quantique</term>
<term>Equation Poisson</term>
<term>GaInAs</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>AlInAs</term>
<term>Non linéarité ordre 2</term>
<term>0130C</term>
<term>4255P</term>
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<front><div type="abstract" xml:lang="en">There is currently considerable interest in terahertz (THz) difference frequency generation (DFG) utilizing near-resonant intersubband nonlinearity in quantum cascade lasers and other quantum well heterostructures. Such devices were shown to operate at room temperature, but their power demonstrated so far has been rather low. In all previous works the intracavity configuration was studied, in which the nonlinear mixing region was placed inside a pump laser cavity. Here we obtain the upper limits on the THz DFG power that can be achieved in intersubband quantum well systems under external optical pumping. We consider strong optical fields and include all resonant absorption or pump depletion, and nonlinear saturation effects by self-consistently solving three coupled wave equations, the Poisson equation, and density matrix equations. Although we use a GaInAs/AlInAs double quantum well heterostructure as an example, our analysis is applicable to any material system possessing resonant second-order optical nonlinearity. The maximal THz DFG power is reached for intermediate pump intensities of the order of the saturation intensity. Further increase of the pump intensity results in the decrease of the maximum THz DFG power. We analyze the dependence of THz power on the length and doping of the nonlinear mixing region, and present the design of the optimal structures.</div>
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<fC01 i1="01" l="ENG"><s0>There is currently considerable interest in terahertz (THz) difference frequency generation (DFG) utilizing near-resonant intersubband nonlinearity in quantum cascade lasers and other quantum well heterostructures. Such devices were shown to operate at room temperature, but their power demonstrated so far has been rather low. In all previous works the intracavity configuration was studied, in which the nonlinear mixing region was placed inside a pump laser cavity. Here we obtain the upper limits on the THz DFG power that can be achieved in intersubband quantum well systems under external optical pumping. We consider strong optical fields and include all resonant absorption or pump depletion, and nonlinear saturation effects by self-consistently solving three coupled wave equations, the Poisson equation, and density matrix equations. Although we use a GaInAs/AlInAs double quantum well heterostructure as an example, our analysis is applicable to any material system possessing resonant second-order optical nonlinearity. The maximal THz DFG power is reached for intermediate pump intensities of the order of the saturation intensity. Further increase of the pump intensity results in the decrease of the maximum THz DFG power. We analyze the dependence of THz power on the length and doping of the nonlinear mixing region, and present the design of the optimal structures.</s0>
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<fC02 i1="02" i2="3"><s0>001B40B55P</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Pompage optique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Optical pumping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Champ intense</s0>
<s5>04</s5>
</fC03>
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<s5>04</s5>
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<s5>05</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Optical saturation</s0>
<s5>05</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Laser cascade quantique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum cascade laser</s0>
<s5>11</s5>
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<fC03 i1="05" i2="X" l="FRE"><s0>Intracavité</s0>
<s5>12</s5>
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<fC03 i1="05" i2="X" l="ENG"><s0>Intracavity</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Cavidad interna</s0>
<s5>12</s5>
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<fC03 i1="06" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>13</s5>
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<s5>13</s5>
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<s5>21</s5>
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<s5>21</s5>
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<s5>23</s5>
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<s5>23</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Teoría onda acoplada</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Matrice densité</s0>
<s5>24</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Density matrix</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Domaine fréquence THz</s0>
<s5>37</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>THz range</s0>
<s5>37</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Fréquence différence</s0>
<s5>38</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Difference frequency</s0>
<s5>38</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Frecuencia diferencia</s0>
<s5>38</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Température ambiante</s0>
<s5>41</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Ambient temperature</s0>
<s5>41</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>47</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>48</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Puits quantique multiple</s0>
<s5>49</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Multiple quantum well</s0>
<s5>49</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0>
<s5>49</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Système quantique</s0>
<s5>61</s5>
</fC03>
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<s5>61</s5>
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<fC03 i1="20" i2="X" l="SPA"><s0>Sistema cuántico</s0>
<s5>61</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Equation Poisson</s0>
<s5>62</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Poisson equation</s0>
<s5>62</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>GaInAs</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>AlInAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Non linéarité ordre 2</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>178</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers</s1>
<s2>10</s2>
<s3>San Francisco CA USA</s3>
<s4>2011</s4>
</fA30>
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Upper limits on terahertz difference frequency generation power in quantum well heterostructures

Upper limits on terahertz difference frequency generation power in quantum well heterostructures

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Abstract

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